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Fabrication of Ultrathin Bi 2 S 3 Nanosheets for High‐Performance, Flexible, Visible–NIR Photodetectors
Author(s) -
Chen Guihuan,
Yu Yongqiang,
Zheng Kun,
Ding Tao,
Wang Wenliang,
Jiang Yang,
Yang Qing
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201403508
Subject(s) - photodetector , fabrication , materials science , flexibility (engineering) , optoelectronics , infrared , computer science , sensitivity (control systems) , nanotechnology , visible spectrum , physics , optics , engineering , medicine , alternative medicine , pathology , electronic engineering , statistics , mathematics
Ultrathin Bi 2 S 3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi 2 S 3 ‐based photoconductor shows high sensitivity to visible–near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W −1 , high detectivity of ≈10 11 Jones, relatively fast response time of ≈10 μs, and high flexibility and durability.