Fabrication of Ultrathin Bi 2 S 3  Nanosheets for High‐Performance, Flexible, Visible–NIR Photodetectors | Zendy

Chen Guihuan | Zendy; Yu Yongqiang | Zendy; Zheng Kun | Zendy; Ding Tao | Zendy; Wang Wenliang | Zendy; Jiang Yang | Zendy; Yang Qing | Zendy

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Fabrication of Ultrathin Bi 2 S 3 Nanosheets for High‐Performance, Flexible, Visible–NIR Photodetectors

Author(s) -

Chen Guihuan,

Yu Yongqiang,

Zheng Kun,

Ding Tao,

Wang Wenliang,

Jiang Yang,

Yang Qing

Publication year - 2015

Publication title -

small

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.785

H-Index - 236

eISSN - 1613-6829

pISSN - 1613-6810

DOI - 10.1002/smll.201403508

Subject(s) - photodetector , fabrication , materials science , flexibility (engineering) , optoelectronics , infrared , computer science , sensitivity (control systems) , nanotechnology , visible spectrum , physics , optics , engineering , medicine , alternative medicine , pathology , electronic engineering , statistics , mathematics

Ultrathin Bi 2 S 3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi 2 S 3 ‐based photoconductor shows high sensitivity to visible–near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W −1 , high detectivity of ≈10 11 Jones, relatively fast response time of ≈10 μs, and high flexibility and durability.

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