Premium
High‐Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT
Author(s) -
Song YongHa,
Ahn SangJoon Kenny,
Kim MinWu,
Lee JeongOen,
Hwang ChiSun,
Pi JaeEun,
Ko SeungDeok,
Choi KwangWook,
Park SangHee Ko,
Yoon JunBo
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201402841
Subject(s) - inverter , thin film transistor , microelectromechanical systems , computer science , electrical engineering , transistor , logic gate , voltage , materials science , electronic engineering , optoelectronics , nanotechnology , engineering , layer (electronics)
A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p‐type oxide thin film transistor (TFT) and an n‐type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero‐short circuit current, and exceedingly high voltage gain.