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Electronic Transport in Heterostructures of Chemical Vapor Deposited Graphene and Hexagonal Boron Nitride
Author(s) -
Qi Zhengqing John,
Hong Sung Ju,
RodríguezManzo Julio A.,
Kybert Nicholas J.,
Gudibande Rajatesh,
Drndić Marija,
Park Yung Woo,
Johnson A. T. Charlie
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201402543
Subject(s) - graphene , hexagonal boron nitride , materials science , chemical vapor deposition , heterojunction , oxide , boron nitride , substrate (aquarium) , nanotechnology , optoelectronics , layer (electronics) , graphene oxide paper , chemical engineering , metallurgy , oceanography , geology , engineering
CVD graphene devices on stacked CVD hexagonal boron nitride (hBN) are demonstrated using a novel low‐contamination transfer method, and their electrical performance is systematically compared to devices on SiO 2 . An order of magnitude improvement in mobility, sheet resistivity, current density, and sustained power is reported when the oxide substrate is covered with five‐layer CVD hBN.