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Controlled Growth of Few‐Layer Hexagonal Boron Nitride on Copper Foils Using Ion Beam Sputtering Deposition
Author(s) -
Wang Haolin,
Zhang Xingwang,
Meng Junhua,
Yin Zhigang,
Liu Xin,
Zhao Yajuan,
Zhang Liuqi
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201402468
Subject(s) - materials science , sputtering , copper , layer (electronics) , deposition (geology) , nitride , chemical vapor deposition , ion beam , chemical engineering , boron nitride , boron , nanotechnology , ion , thin film , metallurgy , chemistry , paleontology , organic chemistry , sediment , engineering , biology
Ion beam sputtering deposition (IBSD) is used to synthesize high quality few‐layer hexagonal boron nitride (h‐BN) on copper foils. Compared to the conventional chemical vapor deposition, the IBSD technique avoids the use of unconventional precursors and is much easier to control, which should be very useful for the large‐scale production of h‐BN in the future.