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Vertically Architectured Stack of Multiple Graphene Field‐Effect Transistors for Flexible Electronics
Author(s) -
Meng Jie,
Chen JingJing,
Zhang Liang,
Bie YaQing,
Liao ZhiMin,
Yu DaPeng
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201402422
Subject(s) - graphene , materials science , nanotechnology , transistor , robustness (evolution) , electronics , flexibility (engineering) , dielectric , stack (abstract data type) , flexible electronics , field effect transistor , optoelectronics , computer science , electrical engineering , engineering , voltage , biochemistry , chemistry , statistics , mathematics , gene , programming language
Vertically architectured stack of multiple graphene field‐effect transistors (GFETs) on a flexible substrate show great mechanical flexibility and robustness. The four GFETs are integrated in the vertical direction, and dually gated GFETs with graphene channel, PMMA dielectrics, and graphene gate electrodes are realized.