Premium
Floating Gate Memory‐based Monolayer MoS 2 Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics
Author(s) -
Wang Jingli,
Zou Xuming,
Xiao Xiangheng,
Xu Lei,
Wang Chunlan,
Jiang Changzhong,
Ho Johnny C.,
Wang Ti,
Li Jinchai,
Liao Lei
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201401872
Subject(s) - nanocrystal , materials science , monolayer , non volatile memory , fabrication , optoelectronics , transistor , trapping , metal gate , dielectric , nanotechnology , high κ dielectric , gate dielectric , electrical engineering , gate oxide , voltage , medicine , ecology , alternative medicine , engineering , pathology , biology
Charge trapping layers are formed from different metallic nanocrystals in MoS 2 ‐based nanocrystal floating gate memory cells in a process compatible with existing fabrication technologies. The memory cells with Au nanocrystals exhibit impressive performance with a large memory window of 10 V, a high program/erase ratio of approximately 10 5 and a long retention time of 10 years.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom