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Floating Gate Memory‐based Monolayer MoS 2 Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics
Author(s) -
Wang Jingli,
Zou Xuming,
Xiao Xiangheng,
Xu Lei,
Wang Chunlan,
Jiang Changzhong,
Ho Johnny C.,
Wang Ti,
Li Jinchai,
Liao Lei
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201401872
Subject(s) - nanocrystal , materials science , monolayer , non volatile memory , fabrication , optoelectronics , transistor , trapping , metal gate , dielectric , nanotechnology , high κ dielectric , gate dielectric , electrical engineering , gate oxide , voltage , medicine , ecology , alternative medicine , engineering , pathology , biology
Charge trapping layers are formed from different metallic nanocrystals in MoS 2 ‐based nanocrystal floating gate memory cells in a process compatible with existing fabrication technologies. The memory cells with Au nanocrystals exhibit impressive performance with a large memory window of 10 V, a high program/erase ratio of approximately 10 5 and a long retention time of 10 years.