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Engineering the Cell–Semiconductor Interface: A Materials Modification Approach using II‐VI and III‐V Semiconductor Materials
Author(s) -
Bain Lauren E.,
Ivanisevic Albena
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201401450
Subject(s) - biocompatibility , semiconductor , nanotechnology , materials science , surface modification , semiconductor device , interface (matter) , semiconductor materials , optoelectronics , chemistry , layer (electronics) , composite material , wetting , metallurgy , sessile drop technique
Developing functional biomedical devices based on semiconductor materials requires an understanding of interactions taking place at the material‐biosystem interface. Cell behavior is dependent on the local physicochemical environment. While standard routes of material preparation involve chemical functionalization of the active surface, this review emphasizes both biocompatibility of unmodified surfaces as well as use of topographic features in manipulating cell‐material interactions. Initially, the review discusses experiments involving unmodified II–VI and III–V semiconductors – a starting point for assessing cytotoxicity and biocompatibility – followed by specific surface modification, including the generation of submicron roughness or the potential effect of quantum dot structures. Finally, the discussion turns to more recent work in coupling topography and specific chemistry, enhancing the tunability of the cell‐semiconductor interface. With this broadened materials approach, researchers' ability to tune the interactions between semiconductors and biological environments continues to improve, reaching new heights in device function.