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Metal‐Etching‐Free Direct Delamination and Transfer of Single‐Layer Graphene with a High Degree of Freedom
Author(s) -
Yang Sang Yoon,
Oh Joong Gun,
Jung Dae Yool,
Choi HongKyw,
Yu Chan Hak,
Shin Jongwoo,
Choi ChoonGi,
Cho Byung Jin,
Choi SungYool
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201401196
Subject(s) - graphene , materials science , etching (microfabrication) , graphene nanoribbons , delamination (geology) , graphene foam , layer (electronics) , metal , substrate (aquarium) , nanotechnology , optoelectronics , degrees of freedom (physics and chemistry) , dry etching , composite material , metallurgy , physics , paleontology , oceanography , quantum mechanics , biology , geology , subduction , tectonics
A method of graphene transfer without metal etching is developed to minimize the contamination of graphene in the transfer process and to endow the transfer process with a greater degree of freedom. The method involves direct delamination of single‐layer graphene from a growth substrate, resulting in transferred graphene with nearly zero Dirac voltage due to the absence of residues that would originate from metal etching. Several demonstrations are also presented to show the high degree of freedom and the resulting versatility of this transfer method.