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Low Carrier Density Epitaxial Graphene Devices On SiC
Author(s) -
Yang Yanfei,
Huang LungI.,
Fukuyama Yasuhiro,
Liu FanHung,
Real Mariano A.,
Barbara Paola,
Liang ChiTe,
Newell David B.,
Elmquist Randolph E.
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201400989
Subject(s) - graphene , materials science , doping , charge carrier density , nanotechnology , epitaxy , aqua regia , computer science , optoelectronics , layer (electronics) , metal , metallurgy
The transport characteristics of graphene devices with low n‐ or p‐type carrier density (∼10 10 –10 11 cm ‐2 ), fabricated using a new process that results in minimal organic surface residues, are reported. The p‐type molecular doping responsible for the low carrier densities is initiated by aqua regia. The resulting devices exhibit highly developed ν = 2 quantized Hall resistance plateaus at magnetic field strengths of less than 4 T.