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CdSe/ZnS Quantum Dot Thin Film Formation by an Electrospray Deposition Process for Light‐Emitting Devices
Author(s) -
Ho My Duyen,
Kim Namhun,
Kim Daekyoung,
Cho Sung Min,
Chae Heeyeop
Publication year - 2014
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201400251
Subject(s) - quantum dot , optoelectronics , light emitting diode , materials science , brightness , deposition (geology) , diode , electrospray , thin film , nanotechnology , chemistry , optics , physics , mass spectrometry , paleontology , chromatography , sediment , biology
About 30 nm quantum‐dot thin films are formed by electrospray deposition (ESD) process and quantum‐dot‐light‐emitting‐diodes (QD‐LEDs) are demonstrated. Maximum brightness of 23 000 cd m –2 and current efficiency of 5.9 cd A –1 are achieved with the ESD process. The ESD process can be a potential solution for large area quantum dot layers with simple and flexible control.

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