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Flexible Electronics: Highly Flexible and Transparent Multilayer MoS 2 Transistors with Graphene Electrodes (Small 19/2013)
Author(s) -
Yoon Jongwon,
Park Woojin,
Bae GaYeong,
Kim Yonghun,
Jang Hun Soo,
Hyun Yujun,
Lim Sung Kwan,
Kahng Yung Ho,
Hong WoongKi,
Lee Byoung Hun,
Ko Heung Cho
Publication year - 2013
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201370112
Subject(s) - graphene , materials science , electrode , optoelectronics , schottky barrier , transistor , nanomaterials , bend radius , transmittance , flexible electronics , nanotechnology , field effect transistor , electronics , bending , composite material , electrical engineering , voltage , engineering , chemistry , diode
A highly flexible and transparent transistor based on an exfoliated MoS 2 channel and CVD‐grown graphene electrodes is reported by W.‐K. Hong, H. C. Ko, and co‐workers on page 3295 . Introducing 2D nanomaterials provides high mechanical flexibility (available bending radius: ± 2.2 mm), optical transmittance (74%), and high current on/off ratio (>10 4 ) with an average field effect mobility of ≈4.7 cm 2 V −1 s −1 , all of which cannot be achieved by other transistors consisting of a MoS 2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, the MoS 2 /graphene interface has a low Schottky barrier of ≈22 meV, which is comparable to the MoS 2 /metal interface.