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All Solution‐Processed Inorganic/Organic Hybrid Permeable Metal‐Base Transistor
Author(s) -
Kim Jong H.,
Yu Hyeonggeun,
Liu Rui,
Kim Do Young,
So Franky
Publication year - 2014
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201303959
Subject(s) - common emitter , transistor , oxide , base (topology) , materials science , electrode , nanotechnology , optoelectronics , computer science , electrical engineering , voltage , chemistry , engineering , metallurgy , mathematical analysis , mathematics
All solution‐processed inorganic/organic hybrid permeable‐base transistor (PMBT) based on nickel oxide emitter and P3HT collector is developed. Due to the high charge injection properties of nickel oxide and spontaneously formed nano‐pinholes in the base electrode, the devices exhibit high common‐base and common‐emitter current gains up to 0.98 and 304, respectively with saturated output current.