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Graphene Field Effect Transistors with Mica as Gate Dielectric Layers
Author(s) -
Low Chong Guan,
Zhang Qing,
Hao Yufeng,
Ruoff Rodney S.
Publication year - 2014
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201303929
Subject(s) - mica , materials science , graphene , dielectric , transconductance , gate dielectric , monolayer , field effect transistor , optoelectronics , transistor , muscovite , nanotechnology , composite material , electrical engineering , quartz , engineering , voltage
Chemical vapor deposited monolayer graphene is transferred onto atomically flat and ultra‐thin muscovite mica to study the transport characteristics of graphene with a test structure of mica‐based graphene field effect transistor (GFET). The transfer curve of the 24 nm mica‐based GFET shows an effective carrier mobility of 2748 cm 2 /Vs and a transconductance of 3.36 μS, a factor of 2 and 7 larger than those values obtained from 40 nm SiO 2 based GFET, respectively. The results demonstrate that mica is an excellent gate dielectric material due to its high dielectric constant, high dielectric strength, and atomically flat surface.