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Graphene Versus Ohmic Metal as Source‐Drain Electrode for MoS 2 Nanosheet Transistor Channel
Author(s) -
Lee Young Tack,
Choi Kyunghee,
Lee Hee Sung,
Min SungWook,
Jeon Pyo Jin,
Hwang Do Kyung,
Choi Hyoung Joon,
Im Seongil
Publication year - 2014
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201303908
Subject(s) - nanosheet , graphene , ohmic contact , materials science , field effect transistor , electrode , transistor , optoelectronics , work function , nanotechnology , bilayer graphene , electrical engineering , voltage , chemistry , layer (electronics) , engineering
Two MoS 2 field‐effect transistors are compared using graphene and Au/Ti source‐drain contacts in respects of their Ohmic and OFF behavior on an identical MoS 2 nanosheet. As a result, graphene‐contact appears not only to show superior ohmic behavior to those of Au/Ti but also more enhanced OFF state behavior. Such results are attributed to the electric‐field‐induced work function tuning of exfoliated graphene.