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Epitaxial Growth of Asymmetrically‐Doped Bilayer Graphene for Photocurrent Generation
Author(s) -
Zhou Yu,
Yan Kai,
Wu Di,
Zhao Shuli,
Lin Li,
Jin Li,
Liao Lei,
Wang Huan,
Fu Qiang,
Bao Xinhe,
Peng Hailin,
Liu Zhongfan
Publication year - 2014
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201303696
Subject(s) - bilayer , bilayer graphene , materials science , photocurrent , doping , stacking , epitaxy , chemical vapor deposition , optoelectronics , layer (electronics) , nanotechnology , graphene , chemistry , membrane , biochemistry , organic chemistry
An asymmetrically doped bilayer graphene is grown by modulation‐doped chemical vapor deposition, which consists of one intrinsic layer and one nitrogen‐doped layer according to AB stacking. The asymmetrically doped bilayer crystalline profile is found to extend the identical registry as adjacent pristine bilayer region, thus forming single‐crystalline bilayer graphene p–n junctions. Efficient photocurrent with responsivity as high as 0.2 mA/W is generated at the bilayer p–n junctions via a hot carrier‐assisted mechanism.