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Silicon‐Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Markers in the Near Infrared
Author(s) -
Zhang Huiliang,
Aharonovich Igor,
Glenn David R.,
Schalek Richard,
Magyar Andrew P.,
Lichtman Jeff W.,
Hu Evelyn L.,
Walsworth Ronald L.
Publication year - 2014
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201303582
Subject(s) - nanodiamond , cathodoluminescence , vacancy defect , laser linewidth , silicon , materials science , nanotechnology , infrared , diamond , optoelectronics , luminescence , optics , chemistry , physics , crystallography , laser , composite material
Nanodiamonds doped with silicon‐vacancy (Si‐V) color centers are shown to be a promising candidate for cathodoluminescence (CL) imaging at the nanoscale, providing bright, non‐bleaching, narrow‐linewidth emission at wavelengths within the near‐IR window of biological tissue. CL emission intensity from negative charge‐state Si‐V centers is greatly enhanced by increasing the nitrogen concentration during nanodiamond growth.