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Supramolecular Chemistry on Graphene Field‐Effect Transistors
Author(s) -
Zhang Xiaoyan,
Huisman Everardus H.,
Gurram Mallikarjuna,
Browne Wesley R.,
van Wees Bart J.,
Feringa Ben L.
Publication year - 2014
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201303098
Subject(s) - graphene , nanotechnology , transistor , materials science , field effect transistor , supramolecular chemistry , dopant , silicon , optoelectronics , doping , chemistry , physics , molecule , organic chemistry , quantum mechanics , voltage
The electronic properties of large‐area graphene transistors (1 mm × 1 mm) prepared from commercially available graphene on silicon/silicon dioxide modified by self‐assembled bis ‐urea‐terthiophene ( T 3 ) and bis ‐urea‐nonane ( C 9 ) molecular wires are reported. Gate spectroscopy on molecularly modified graphene transistors show that the electronic interaction between the molecular wires and the graphene is weak compared to the effect of unwanted dopants.