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High Detectivity Solar‐Blind High‐Temperature Deep‐Ultraviolet Photodetector Based on Multi‐Layered ( l 00) Facet‐Oriented β ‐Ga 2 O 3 Nanobelts
Author(s) -
Zou Rujia,
Zhang Zhenyu,
Liu Qian,
Hu Junqing,
Sang Liwen,
Liao Meiyong,
Zhang Wenjun
Publication year - 2014
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201302705
Subject(s) - photodetector , materials science , optoelectronics , ultraviolet , dark current , fabrication , facet (psychology) , medicine , psychology , social psychology , alternative medicine , personality , pathology , big five personality traits
Fabrication of a high‐temperature deep‐ultraviolet photodetector working in the solar‐blind spectrum range (190–280 nm) is a challenge due to the degradation in the dark current and photoresponse properties. Herein, β ‐Ga 2 O 3 multi‐layered nanobelts with ( l 00) facet‐oriented were synthesized, and were demonstrated for the first time to possess excellent mechanical, electrical properties and stability at a high temperature inside a TEM studies. As‐fabricated DUV solar‐blind photodetectors using ( l 00) facet‐oriented β ‐Ga 2 O 3 multi‐layered nanobelts demonstrated enhanced photodetective performances, that is, high sensitivity, high signal‐to‐noise ratio, high spectral selectivity, high speed, and high stability, importantly, at a temperature as high as 433 K, which are comparable to other reported semiconducting nanomaterial photodetectors. In particular, the characteristics of the photoresponsivity of the β ‐Ga 2 O 3 nanobelt devices include a high photoexcited current (>21 nA), an ultralow dark current (below the detection limit of 10 −14 A), a fast time response (<0.3 s), a high R λ (≈851 A/W), and a high EQE (∼4.2 × 10 3 ). The present fabricated facet‐oriented β ‐Ga 2 O 3 multi‐layered nanobelt based devices will find practical applications in photodetectors or optical switches for high‐temperature environment.