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Efficient Room‐Temperature Near‐Infrared Detection with Solution‐Processed Networked Single Wall Carbon Nanotube Field Effect Transistors
Author(s) -
Hwang Ihn,
Jung Hee June,
Cho Sung Hwan,
Jo Seong Soon,
Choi Yeon Sik,
Sung Ji Ho,
Choi Jae Ho,
Jo Moon Ho,
Park Cheolmin
Publication year - 2014
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201301582
Subject(s) - photocurrent , carbon nanotube , materials science , optoelectronics , dark current , electrode , schottky barrier , current (fluid) , schottky diode , field effect transistor , transistor , graphene , photoconductivity , nanotechnology , carbon nanotube field effect transistor , near infrared spectroscopy , infrared , photodetector , electrical engineering , optics , voltage , chemistry , physics , engineering , diode
Efficient room temperature NIR detection with sufficient current gain is made with a solution‐processed networked SWNT FET. The high performance NIR‐FET with significantly enhanced photocurrent by more than two orders of magnitude compared to dark current in the depleted state is attributed to multiple Schottky barriers in the network, each of which absorb NIR and effectively separate photocarriers to corresponding electrodes.