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Layer Thinning and Etching of Mechanically Exfoliated MoS 2 Nanosheets by Thermal Annealing in Air
Author(s) -
Wu Jumiati,
Li Hai,
Yin Zongyou,
Li Hong,
Liu Juqing,
Cao Xiehong,
Zhang Qing,
Zhang Hua
Publication year - 2013
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201301542
Subject(s) - nanosheet , materials science , annealing (glass) , etching (microfabrication) , thinning , thermal , nanotechnology , layer (electronics) , optoelectronics , composite material , chemical engineering , ecology , physics , meteorology , engineering , biology
A simple thermal annealing method for layer thinning and etching of mechanically exfoliated MoS 2 nanosheets in air is reported. Using this method, single‐layer (1L) MoS 2 nanosheets are achieved after the thinning of MoS 2 nanosheets from double‐layer (2L) to quadri‐layer (4L) at 330 °C. The as‐prepared 1L MoS 2 nanosheet shows comparable optical and electrical properties with the mechanically exfoliated, pristine one. In addition, for the first time, the MoS 2 mesh with high‐density of triangular pits is also fabricated at 330 °C, which might arise from the anisotropic etching of the active MoS 2 edge sites. As a result of thermal annealing in air, the thinning of MoS 2 nanosheet is possible due to its oxidation to form MoO 3 . Importantly, the MoO 3 fragments on the top of thinned MoS 2 layer induces the hole injection, resulting in the p ‐type channel in fabricated field‐effect transistors.