Premium
Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole‐Injection in Quantum Dot Light‐Emitting Diodes
Author(s) -
Yang Xuyong,
Mutlugun Evren,
Zhao Yongbiao,
Gao Yuan,
Leck Kheng Swee,
Ma Yanyan,
Ke Lin,
Tan Swee Tiam,
Demir Hilmi Volkan,
Sun Xiao Wei
Publication year - 2014
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201301199
Subject(s) - quantum dot , materials science , layer (electronics) , pedot:pss , nanoparticle , optoelectronics , light emitting diode , tungsten , diode , nanotechnology , oxide , metallurgy
A highly efficient and stable QLED using an inorganic WO 3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO 3 nanoparticle‐based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS‐based QLEDs. The results indicate that WO 3 nanoparticles are promising solution‐processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next‐generation lighting and displays.