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A Strategy to Prepare Wafer Scale Bismuth Compound Superstructures
Author(s) -
Guo Chuan Fei,
Zhang Jianming,
Wang Meng,
Tian Ye,
Liu Qian
Publication year - 2013
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201300777
Subject(s) - bismuth , materials science , wafer , amorphous solid , epitaxy , crystallization , layer (electronics) , nanotechnology , sputtering , bismuth titanate , morphology (biology) , chemical engineering , thin film , ferroelectricity , optoelectronics , crystallography , metallurgy , chemistry , dielectric , engineering , genetics , biology
Epitaxial wafer scale superstructures of bismuth compounds are synthesized. Single crystalline β ‐Bi 2 O 3 films are obtained by sputtering amorphous BiO x onto (001)‐oriented strontium titanate with a buffer layer, followed by thermal crystallization. This is used as the precursor for the growth of the superstructures. The superstructures of bismuth compounds reveal anisotropic physical properties that are related to their unique morphology.