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Enhanced Field‐Emission Behavior of Layered MoS 2 Sheets
Author(s) -
Kashid Ranjit V.,
Late Dattatray J.,
Chou Stanley S.,
Huang YiKai,
De Mrinmoy,
Joag Dilip S.,
More Mahendra A.,
Dravid Vinayak P.
Publication year - 2013
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201300002
Subject(s) - field electron emission , materials science , common emitter , microelectronics , field (mathematics) , graphene , carbon nanotube , current density , planar , optoelectronics , current (fluid) , nanotechnology , field emission display , electrical engineering , physics , electron , mathematics , computer graphics (images) , engineering , quantum mechanics , computer science , pure mathematics
Field emission studies are reported for the first time on layered MoS 2 sheets at the base pressure of ∼1 × 10 −8 mbar. The turn‐on field required to draw a field emission current density of 10 μ A/cm 2 is found to be 3.5 V/ μ m for MoS 2 sheets. The turn‐on values are found to be significantly lower than the reported MoS 2 nanoflowers, graphene, and carbon nanotube‐based field emitters due to the high field enhancement factor (∼1138) associated with nanometric sharp edges of MoS 2 sheet emitter surface. The emission current–time plots show good stability over a period of 3 h. Owing to the low turn‐on field and planar (sheetlike) structure, the MoS 2 could be utilized for future vacuum microelectronics/nanoelectronic and flat panel display applications.