z-logo
Premium
Enhanced Field‐Emission Behavior of Layered MoS 2 Sheets
Author(s) -
Kashid Ranjit V.,
Late Dattatray J.,
Chou Stanley S.,
Huang YiKai,
De Mrinmoy,
Joag Dilip S.,
More Mahendra A.,
Dravid Vinayak P.
Publication year - 2013
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201300002
Subject(s) - field electron emission , materials science , common emitter , microelectronics , field (mathematics) , graphene , carbon nanotube , current density , planar , optoelectronics , current (fluid) , nanotechnology , field emission display , electrical engineering , physics , electron , mathematics , computer graphics (images) , engineering , quantum mechanics , computer science , pure mathematics
Field emission studies are reported for the first time on layered MoS 2 sheets at the base pressure of ∼1 × 10 −8 mbar. The turn‐on field required to draw a field emission current density of 10 μ A/cm 2 is found to be 3.5 V/ μ m for MoS 2 sheets. The turn‐on values are found to be significantly lower than the reported MoS 2 nanoflowers, graphene, and carbon nanotube‐based field emitters due to the high field enhancement factor (∼1138) associated with nanometric sharp edges of MoS 2 sheet emitter surface. The emission current–time plots show good stability over a period of 3 h. Owing to the low turn‐on field and planar (sheetlike) structure, the MoS 2 could be utilized for future vacuum microelectronics/nanoelectronic and flat panel display applications.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom