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Data Storage: MoS 2 Nanosheets for Top‐Gate Nonvolatile Memory Transistor Channel (Small 20/2012)
Author(s) -
Lee Hee Sung,
Min SungWook,
Park Min Kyu,
Lee Young Tack,
Jeon Pyo Jin,
Kim Jae Hoon,
Ryu Sunmin,
Im Seongil
Publication year - 2012
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201290111
Subject(s) - non volatile memory , materials science , transistor , optoelectronics , channel (broadcasting) , data retention , ferroelectricity , layer (electronics) , nanotechnology , computer science , electrical engineering , voltage , dielectric , engineering , telecommunications
On page 3111 , S. Im and co‐workers demonstrate top‐gate ferroelectric memory transistors with single‐ to triple‐layered MoS 2 nanosheets adopting P(VDF‐TrFE). This nonvolatile memory transistor with a single‐layer MoS 2 channel exhibits excellent retention properties for more than 1000 s, maintaining ∼5 × 10 3 as a programme/erase ratio. It also displays a high mobility of ∼220 cm 2 /V·s.