Data Storage: MoS 2  Nanosheets for Top‐Gate Nonvolatile Memory Transistor Channel (Small 20/2012) | Zendy

Lee Hee Sung | Zendy; Min SungWook | Zendy; Park Min Kyu | Zendy; Lee Young Tack | Zendy; Jeon Pyo Jin | Zendy; Kim Jae Hoon | Zendy; Ryu Sunmin | Zendy; Im Seongil | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Data Storage: MoS 2 Nanosheets for Top‐Gate Nonvolatile Memory Transistor Channel (Small 20/2012)

Author(s) -

Lee Hee Sung,

Min SungWook,

Park Min Kyu,

Lee Young Tack,

Jeon Pyo Jin,

Kim Jae Hoon,

Ryu Sunmin,

Im Seongil

Publication year - 2012

Publication title -

small

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.785

H-Index - 236

eISSN - 1613-6829

pISSN - 1613-6810

DOI - 10.1002/smll.201290111

Subject(s) - non volatile memory , materials science , transistor , optoelectronics , channel (broadcasting) , data retention , ferroelectricity , layer (electronics) , nanotechnology , computer science , electrical engineering , voltage , dielectric , engineering , telecommunications

On page 3111 , S. Im and co‐workers demonstrate top‐gate ferroelectric memory transistors with single‐ to triple‐layered MoS 2 nanosheets adopting P(VDF‐TrFE). This nonvolatile memory transistor with a single‐layer MoS 2 channel exhibits excellent retention properties for more than 1000 s, maintaining ∼5 × 10 3 as a programme/erase ratio. It also displays a high mobility of ∼220 cm 2 /V·s.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research