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Monolayer Graphene Film on ZnO Nanorod Array for High‐Performance Schottky Junction Ultraviolet Photodetectors
Author(s) -
Nie Biao,
Hu JiGang,
Luo LinBao,
Xie Chao,
Zeng LongHui,
Lv Peng,
Li FangZe,
Jie JianSheng,
Feng Mei,
Wu ChunYan,
Yu YongQiang,
Yu ShuHong
Publication year - 2013
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201203188
Subject(s) - materials science , photodetector , optoelectronics , nanorod , ultraviolet , heterojunction , schottky barrier , monolayer , schottky diode , graphene , diode , nanotechnology
A new Schottky junction ultraviolet photodetector (UVPD) is fabricated by coating a free‐standing ZnO nanorod (ZnONR) array with a layer of transparent monolayer graphene (MLG) film. The single‐crystalline [0001]‐oriented ZnONR array has a length of about 8–11 μm, and a diameter of 100∼600 nm. Finite element method (FEM) simulation results show that this novel nanostructure array/MLG heterojunction can trap UV photons effectively within the ZnONRs. By studying the I–V characteristics in the temperature range of 80–300 K, the barrier heights of the MLG film/ZnONR array Schottky barrier are estimated at different temperatures. Interestingly, the heterojunction diode with typical rectifying characteristics exhibits a high sensitivity to UV light illumination and a quick response of millisecond rise time/fall times with excellent reproducibility, whereas it is weakly sensitive to visible light irradiation. It is also observed that this UV photodetector (PD) is capable of monitoring a fast switching light with a frequency as high as 2250 Hz. The generality of the above results suggest that this MLG film/ZnONR array Schottky junction UVPD will have potential application in future optoelectronic devices.