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Facile Synthesis of Large‐Area Ultrathin Hexagonal BN Films via Self‐Limiting Growth at the Molten B 2 O 3 Surface
Author(s) -
Yang Xiaoxia,
Guan Zixuan,
Zeng Min,
Wei Jiake,
Wang Wenlong,
Bai Xuedong
Publication year - 2013
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201203126
Subject(s) - materials science , self limiting , hexagonal boron nitride , boron oxide , limiting , boron , boron nitride , chemical engineering , hexagonal crystal system , oxide , nanotechnology , ammonia , self propagating high temperature synthesis , nitride , crystallography , metallurgy , layer (electronics) , microstructure , graphene , chemistry , organic chemistry , medicine , mechanical engineering , dermatology , engineering
A self‐limiting growth process based on the interface‐controlled reaction of molten boron oxide (B 2 O 3 ) with ammonia (NH 3 ) is demonstrated for the facile and lost‐cost synthesis of ultrathin (20–30 nm) crystalline hexagonal boron nitride ( h ‐BN) films over large areas. The as‐grown h ‐BN films are of high quality, being densely continuous, uniform and smooth, and highly transparent over a broad wavelength range.