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Widely Tunable Carrier Mobility of Boron Nitride‐Embedded Graphene
Author(s) -
Wang Jinying,
Zhao Ruiqi,
Liu Zhongfan,
Liu Zhirong
Publication year - 2013
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201202978
Subject(s) - graphene , electron mobility , materials science , boron nitride , optoelectronics , density functional theory , band gap , boltzmann equation , condensed matter physics , chemical physics , nanotechnology , computational chemistry , chemistry , thermodynamics , physics
The carrier transport in boron nitride‐embedded graphene (BNG) is studied using density functional theory coupled with the Boltzmann transport equation. Under a phonon scattering mechanism, the intrinsic carrier mobility of BNG at room temperature is tunable from 1.7 × 10 3 to 1.1 × 10 5 cm 2 V −1 s −1 when the bandgap is between 0.38 and 1.39 eV. Some specific BNG materials even show ultrahigh mobility up to 6.6 × 10 6 cm 2 V −1 s −1 , and the transport polarity (whether it is electron or hole transport) can be tailored by the application of a uniaxial strain. The wide mobility variation of BNG is attributed to the dependence of the effective mass and the deformation potential constant on the carbon concentration and width. The results indicate that BNG can have both a large on–off ratio and high carrier mobility and is thus a promising material for electronic devices.