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Thermal and Electrical Conduction in Ultrathin Metallic Films: 7 nm down to Sub‐Nanometer Thickness
Author(s) -
Lin Huan,
Xu Shen,
Wang Xinwei,
Mei Ning
Publication year - 2013
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201202877
Subject(s) - materials science , grain boundary , thermal conduction , nanometre , electrical resistivity and conductivity , metal , thermal , scattering , grain size , thermal conductivity , electrical conduction , condensed matter physics , electron , composite material , optics , metallurgy , microstructure , thermodynamics , physics , quantum mechanics , electrical engineering , engineering
For ultrathin metallic films (e.g., less than 5 nm), no knowledge is yet available on how electron scattering at surface and grain boundaries reduces the electrical and thermal transport. The thermal and electrical conduction of metallic films is characterized down to 0.6 nm average thickness. The electrical and thermal conductivities of 0.6 nm Ir film are reduced by 82% and 50% from the respective bulk values. The Lorenz number is measured as 7.08 × 10 −8 W Ω K −2 , almost a twofold increase of the bulk value. The Mayadas‐Shatzkes model is used to interpret the experimental results and reveals very strong electron reflection (>90%) at grain boundaries.