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Nonvolatile Analog Memory Transistor Based on Carbon Nanotubes and C60 Molecules
Author(s) -
Cho Byungjin,
Kim Kyunghyun,
Chen ChiaLing,
Shen Alex Ming,
Truong Quyen,
Chen Yong
Publication year - 2013
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201202593
Subject(s) - materials science , transistor , non volatile memory , carbon nanotube , molecule , optoelectronics , nanotechnology , carbon nanotube field effect transistor , electron , channel (broadcasting) , field effect transistor , voltage , electrical engineering , chemistry , physics , organic chemistry , quantum mechanics , engineering
Abstract A nonvolatile analog memory transistor is demonstrated by integrating C60 molecules as charge storage molecules in the transistor gate, and carbon nanotubes (CNTs) in the transistor channel. The currents through the CNT channel can be tuned quantitatively and reversibly to analog values by controlling the number of electrons trapped in the C60 molecules. After tuning, the electrons trapped in the C60 molecules in the gate, and the current through the CNT channel, can be preserved in a nonvolatile manner, indicating the characteristics of the nonvolatile analog memory.

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