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Geometry‐Induced Dislocations in Coaxial Heterostructural Nanotubes
Author(s) -
Yoon Aram,
Park Jun Young,
Jeon JongMyeong,
Cho Yigil,
Park Jun Beom,
Yi GyuChul,
Oh Kyu Hwan,
Han Heung Nam,
Kim Miyoung
Publication year - 2013
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201202051
Subject(s) - materials science , nanostructure , nanotechnology , coaxial , lattice (music) , substrate (aquarium) , condensed matter physics , electron microscope , transmission electron microscopy , optoelectronics , crystallography , optics , chemistry , oceanography , physics , geology , acoustics , electrical engineering , engineering
Highly localized dislocations in GaN/ZnO hetero‐nanostructures are generated from the residual strain field by lattice mismatches at two interfaces: between the substrate and hetero‐nanostructures, and between the ZnO core and GaN shell. The local strain field is measured using tranmission electron microscopy, and the relationship between the nanostructure morphology and the highly localized dislocations is analyzed by a finite element method.