Memory Devices Using a Mixture of MoS 2  and Graphene Oxide as the Active Layer | Zendy

Yin Zongyou | Zendy; Zeng Zhiyuan | Zendy; Liu Juqing | Zendy; He Qiyuan | Zendy; Chen Peng | Zendy; Zhang Hua | Zendy

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Memory Devices Using a Mixture of MoS 2 and Graphene Oxide as the Active Layer

Author(s) -

Yin Zongyou,

Zeng Zhiyuan,

Liu Juqing,

He Qiyuan,

Chen Peng,

Zhang Hua

Publication year - 2013

Publication title -

small

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.785

H-Index - 236

eISSN - 1613-6829

pISSN - 1613-6810

DOI - 10.1002/smll.201201940

Subject(s) - graphene , materials science , bistability , oxide , non volatile memory , layer (electronics) , optoelectronics , electrical conductor , nanotechnology , active layer , conductivity , graphene oxide paper , thin film transistor , composite material , chemistry , metallurgy

A mixed film consisting of 2D MoS 2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS 2 component in the MoS 2 ‐GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS 2 ‐GO film‐based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 2 ).

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