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Memory Devices Using a Mixture of MoS 2 and Graphene Oxide as the Active Layer
Author(s) -
Yin Zongyou,
Zeng Zhiyuan,
Liu Juqing,
He Qiyuan,
Chen Peng,
Zhang Hua
Publication year - 2013
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201201940
Subject(s) - graphene , materials science , bistability , oxide , non volatile memory , layer (electronics) , optoelectronics , electrical conductor , nanotechnology , active layer , conductivity , graphene oxide paper , thin film transistor , composite material , chemistry , metallurgy
A mixed film consisting of 2D MoS 2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS 2 component in the MoS 2 ‐GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS 2 ‐GO film‐based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 2 ).