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Top‐Down Fabricated Silicon‐Nanowire‐Based Field‐Effect Transistor Device on a (111) Silicon Wafer
Author(s) -
Yu Xiao,
Wang Yuchen,
Zhou Hong,
Liu Yanxiang,
Wang Yi,
Li Tie,
Wang Yuelin
Publication year - 2013
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201201599
Subject(s) - materials science , wafer , microfabrication , fabrication , silicon , nanowire , etching (microfabrication) , field effect transistor , nanotechnology , optoelectronics , transistor , hybrid silicon laser , silicon nanowires , electrical engineering , layer (electronics) , voltage , medicine , alternative medicine , engineering , pathology
The unique anisotropic wet‐etching mechanism of a (111) silicon wafer facilitates the highly controllable top‐down fabrication of silicon nanowires (SiNWs) with conventional microfabrication technology. The fabrication process is compatible with the surface manufacturing technique, which is employed to build a nanowire‐based field‐effect transistor structure on the fabricated SiNW.