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Complementary Logic Gate Arrays Based on Carbon Nanotube Network Transistors
Author(s) -
Gao Pingqi,
Zou Jianping,
Li Hong,
Zhang Kang,
Zhang Qing
Publication year - 2013
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201201237
Subject(s) - nand gate , microelectronics , carbon nanotube , materials science , transistor , nanotechnology , logic gate , scalability , field effect transistor , carbon nanotube field effect transistor , optoelectronics , electronic engineering , electrical engineering , computer science , engineering , voltage , database
An efficient technique of fabricating high performance n‐ and p‐ type single‐walled carbon nanotube (SWNT) network field‐effect transistors (NET‐FETs) is successfully demonstrated. Complementary inverters, NOR, NAND, OR, AND logic gates have been achieved from integrating these p‐ and n‐type SWNT‐NET‐FETs. The processing technique described here is fully compatible with conventional silicon microelectronic technologies and it is readily suitable for scalable integration.