Premium
Fabrication of Flexible MoS 2 Thin‐Film Transistor Arrays for Practical Gas‐Sensing Applications
Author(s) -
He Qiyuan,
Zeng Zhiyuan,
Yin Zongyou,
Li Hai,
Wu Shixin,
Huang Xiao,
Zhang Hua
Publication year - 2012
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201201224
Subject(s) - materials science , fabrication , graphene , transistor , thin film transistor , optoelectronics , nanotechnology , thin film , electrode , sensitivity (control systems) , oxide , electronic engineering , electrical engineering , layer (electronics) , voltage , chemistry , medicine , alternative medicine , engineering , pathology , metallurgy
By combining two kinds of solution‐processable two‐dimensional materials, a flexible transistor array is fabricated in which MoS 2 thin film is used as the active channel and reduced graphene oxide (rGO) film is used as the drain and source electrodes. The simple device configuration and the 1.5 mm‐long MoS 2 channel ensure highly reproducible device fabrication and operation. This flexible transistor array can be used as a highly sensitive gas sensor with excellent reproducibility. Compared to using rGO thin film as the active channel, this new gas sensor exhibits much higher sensitivity. Moreover, functionalization of the MoS 2 thin film with Pt nanoparticles further increases the sensitivity by up to ∼3 times. The successful incorporation of a MoS 2 thin‐film into the electronic sensor promises its potential application in various electronic devices.