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High‐Efficiency, Microscale GaN Light‐Emitting Diodes and Their Thermal Properties on Unusual Substrates
Author(s) -
Kim Taeil,
Jung Yei Hwan,
Song Jizhou,
Kim Daegon,
Li Yuhang,
Kim Hoonsik,
Song IlSun,
Wierer Jonathan J.,
Pao Hsuan An,
Huang Yonggang,
Rogers John A.
Publication year - 2012
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201200382
Subject(s) - microscale chemistry , light emitting diode , materials science , optoelectronics , diode , thermal , thermal management of electronic devices and systems , wide bandgap semiconductor , gallium nitride , nanotechnology , mechanical engineering , mathematics education , mathematics , physics , meteorology , engineering , layer (electronics)
A method for forming efficient, ultrathin GaN light‐emitting diodes (LEDs) and for their assembly onto foreign substances is reported. The LEDs have lateral dimensions ranging from ∼1 mm × 1 mm to ∼25 μm × 25 μm. Quantitative experimental and theoretical studies show the benefits of small device geometry on thermal management, for both continuous and pulsed‐mode operation, the latter of which suggests the potential use of these technologies in bio‐integrated contexts.