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Ultra‐thin and Flat Mica as Gate Dielectric Layers
Author(s) -
Low Chong Guan,
Zhang Qing
Publication year - 2012
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201200300
Subject(s) - dielectric , mica , gate dielectric , materials science , optoelectronics , transistor , nanotechnology , surface roughness , thin film , electrical engineering , composite material , voltage , engineering
Ultra‐thin and flat mica‐based carbon nanotube field‐effect transistors reveal the excellent gate control capability and low leakage current due to the high dielectric constant and high dielectric strength of ultra‐thin mica as the gate dielectric. Subthreshold swing of 110 mV/dec and carrier mobility improvement are achieved. The ultra‐thin mica retains its surface flatness, indicating the potential application for low‐dimensional materials in which surface roughness scattering is significant.