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Nanowire Switches: Resistive‐Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires (Small 20/2011)
Author(s) -
Cagli Carlo,
Nardi Federico,
Harteneck Bruce,
Tan Zhongkui,
Zhang Yuegang,
Ielmini Daniele
Publication year - 2011
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201190077
Subject(s) - nanowire , materials science , non blocking i/o , anodizing , optoelectronics , nanotechnology , resistive touchscreen , crossbar switch , oxide , electrode , ribbon , resistive random access memory , aluminium , composite material , metallurgy , electronic engineering , electrical engineering , biochemistry , chemistry , engineering , catalysis
The cover picture features a resistive switching memory nanodevice based on core‐shell nanowires (NWs). The background image shows as‐grown Ni NWs in an anodized aluminum oxide (AAO) template. Core‐shell NWs are obtained by electrodeposition of Ni NWs within an AAO template and subsequent surface oxidation to form the active oxide shell. The resulting NW has a Ni core and a NiO shell, a known oxide suitable for a metal‐insulator transition in resistive switching. Nanodevices like the one in the figure are obtained by magnetically assisted assembly and electrode formation by electron‐beam lithography. Nonvolatile resistance switching with a resistance window of more than 5 decades is obtained, evidencing the metal‐insulator transition at the cross‐point junction between the two core‐shell NWs. For more information, please read the Full Paper, “Resistive‐ Switching Crossbar Memory Based on Ni‐NiO Core‐Shell Nanowires” by Y. Zhang, D. Ielmini, and co‐workers, starting on page 2899 .