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Stretchable Semiconductor Technologies with High Areal Coverages and Strain‐Limiting Behavior: Demonstration in High‐Efficiency Dual‐Junction GaInP/GaAs Photovoltaics
Author(s) -
Lee Jongho,
Wu Jian,
Ryu Jae Ha,
Liu Zhuangjian,
Meitl Matthew,
Zhang YongWei,
Huang Yonggang,
Rogers John A.
Publication year - 2012
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201102437
Subject(s) - materials science , microscale chemistry , limiting , photovoltaics , optoelectronics , substrate (aquarium) , elastomer , semiconductor , strain (injury) , photovoltaic system , nanotechnology , composite material , electrical engineering , mechanical engineering , mathematics education , mathematics , engineering , medicine , oceanography , geology
Notched islands on a thin elastomeric substrate serve as a platform for dual‐junction GaInP/GaAs solar cells with microscale dimensions and ultrathin forms for stretchable photovoltaic modules. These designs allow for a high degree of stretchability and areal coverage, and they provide a natural form of strain‐limiting behavior, helping to avoid destructive effects of extreme deformations.