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Carbon–Silicon Schottky Barrier Diodes
Author(s) -
Yim Chanyoung,
McEvoy Niall,
Rezvani Ehsan,
Kumar Shishir,
Duesberg Georg S.
Publication year - 2012
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201101996
Subject(s) - materials science , schottky diode , fabrication , photoresist , silicon , pyrolytic carbon , optoelectronics , schottky barrier , diode , carbon fibers , nanotechnology , electrical conductor , carbon nanotube , chemical engineering , composite material , layer (electronics) , pyrolysis , engineering , pathology , composite number , medicine , alternative medicine
The simple fabrication of high‐performance Schottky barrier diodes between silicon and conductive carbon films (C‐Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained. These remarkable values, which are not far away from those of commercial products are obtained repeatedly on non‐optimized substrates with fully scalable processes.