Premium
Converting Graphene Oxide Monolayers into Boron Carbonitride Nanosheets by Substitutional Doping
Author(s) -
Lin TsungWu,
Su ChingYuan,
Zhang XinQuan,
Zhang Wenjing,
Lee YiHsien,
Chu ChihWei,
Lin HsinYu,
Chang MuTung,
Chen FuRong,
Li LainJong
Publication year - 2012
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201101927
Subject(s) - graphene , materials science , nanosheet , boron nitride , nanotechnology , doping , band gap , oxide , boron , graphene oxide paper , graphene nanoribbons , boron oxide , ambipolar diffusion , bilayer graphene , optoelectronics , chemistry , plasma , organic chemistry , physics , quantum mechanics , metallurgy
To realize graphene‐based electronics, bandgap opening of graphene has become one of the most important issues that urgently need to be addressed. Recent theoretical and experimental studies show that intentional doping of graphene with boron and nitrogen atoms is a promising route to open the bandgap, and the doped graphene might exhibit properties complementary to those of graphene and hexagonal boron nitride ( h‐ BN), largely extending the applications of these materials in the areas of electronics and optics. This work demonstrates the conversion of graphene oxide nanosheets into boron carbonitride (BCN) nanosheets by reacting them with B 2 O 3 and ammonia at 900 to 1100 °C, by which the boron and nitrogen atoms are incorporated into the graphene lattice in randomly distributed BN nanodomains. The content of BN in BN‐doped graphene nanosheets can be tuned by changing the reaction temperature, which in turn affects the optical bandgap of these nanosheets. Electrical measurements show that the BN‐doped graphene nanosheet exhibits an ambipolar semiconductor behavior and the electrical bandgap is estimated to be ≈25.8 meV. This study provides a novel and simple route to synthesize BN‐doped graphene nanosheets that may be useful for various optoelectronic applications.