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Contact Resistance and Megahertz Operation of Aggressively Scaled Organic Transistors
Author(s) -
Ante Frederik,
Kälblein Daniel,
Zaki Tarek,
Zschieschang Ute,
Takimiya Kazuo,
Ikeda Masaaki,
Sekitani Tsuyoshi,
Someya Takao,
Burghartz Joachim N.,
Kern Klaus,
Klauk Hagen
Publication year - 2012
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201101677
Subject(s) - transistor , thin film transistor , contact resistance , channel (broadcasting) , materials science , transfer (computing) , optoelectronics , signal (programming language) , relation (database) , computer science , layer (electronics) , electrical engineering , nanotechnology , telecommunications , engineering , voltage , programming language , database , parallel computing
Bottom‐gate, top‐contact organic thin‐film transistors (TFTs) with excellent static characteristics (on/off ratio: 10 7 ; intrinsic mobility: 3 cm 2 (V s) −1 ) and fast unipolar ring oscillators (signal delay as short as 230 ns per stage) are fabricated. The significant contribution of the transfer length to the relation between channel length, contact length, contact resistance, effective mobility, and cutoff frequency of the TFTs is theoretically and experimentally analyzed.