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Tuning Electron Transport in Graphene‐Based Field‐Effect Devices using Block Co‐polymers
Author(s) -
Guo Shirui,
Ghazinejad Maziar,
Qin Xiangdong,
Sun Huaxing,
Wang Wei,
Zaera Francisco,
Ozkan Mihrimah,
Ozkan Cengiz S.
Publication year - 2012
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201101611
Subject(s) - graphene , materials science , doping , nanotechnology , polymer , field effect transistor , transistor , optoelectronics , chemical engineering , composite material , electrical engineering , voltage , engineering
Graphene possesses many remarkable properties and shows promise as the future material for building nanoelectronic devices. For many applications such as graphene‐based field‐effect transistors (GFET), it is essential to control or modulate the electronic properties by means of doping. Using spatially controlled plasma‐assisted CF 4 doping, the Dirac point shift of a GFET covered with a polycrystalline PS‐P4VP block co‐polymer (BCP) [poly(styrene‐ b ‐4‐vinylpyridine)] having a cylindrical morphology can be controlled. By changing the chemical component of the microdomain (P4VP) and the major domain (PS) with the CF 4 plasma technique, the doping effect is demonstrated. This work provides a methodology where the Dirac point can be controlled via the different sensitivities of the PS and P4VP components of the BCP subjected to plasma processing.