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Resistive‐Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires
Author(s) -
Cagli Carlo,
Nardi Federico,
Harteneck Bruce,
Tan Zhongkui,
Zhang Yuegang,
Ielmini Daniele
Publication year - 2011
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201101157
Subject(s) - resistive random access memory , crossbar switch , materials science , non blocking i/o , nanowire , fabrication , optoelectronics , nanotechnology , metal insulator metal , non volatile memory , electrode , resistive touchscreen , oxide , insulator (electricity) , electronic engineering , electrical engineering , voltage , capacitor , physics , engineering , medicine , biochemistry , chemistry , alternative medicine , pathology , metallurgy , catalysis , quantum mechanics
Resistive‐switching memory (RRAM) is an emerging nanoscale device based on the localized metal–insulator transition within a few‐nanometer‐sized metal oxide region. RRAM is one of the most promising memory technologies for the ultimate downscaling of nonvolatile memory. However, to develop memory arrays with densities approaching 1 Tb cm −2 , bottom‐up schemes based on synthesis and assembly of metal oxide nanowires (NWs) must be demonstrated. A RRAM memory device based on core–shell Ni‐NiO NWs is presented, in which the Ni core plays the role of the metallic interconnect, while the NiO shell serves as the active switching layer. A resistance change of at least two orders of magnitude is shown on electrical operation of the device, and the metal–insulator switching is unequivocally demonstrated to take place in the NiO shell at the crossing between two NWs or between a NW and a gold electrode strip. Since the fabrication of the NW crossbar device is not limited by lithography, this approach may provide a basis for high‐density, low‐cost crossbar memory with long‐term storage stability.