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Fabrication of Single‐ and Multilayer MoS 2 Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature
Author(s) -
Li Hai,
Yin Zongyou,
He Qiyuan,
Li Hong,
Huang Xiao,
Lu Gang,
Fam Derrick Wen Hui,
Tok Alfred Iing Yoong,
Zhang Qing,
Zhang Hua
Publication year - 2012
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201101016
Subject(s) - fabrication , materials science , field effect transistor , optoelectronics , transistor , nanotechnology , field (mathematics) , engineering physics , electrical engineering , voltage , physics , engineering , medicine , alternative medicine , pathology , mathematics , pure mathematics
Single‐ and multilayer MoS 2 films are deposited onto Si/SiO 2 using the mechanical exfoliation technique. The films were then used for the fabrication of field‐effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single‐layer MoS 2 device shows a rapid response after exposure to NO, the current was found to be unstable. The two‐, three‐, and four‐layer MoS 2 devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm.