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Self‐Aligned Sub‐10‐nm Nanogap Electrode Array for Large‐Scale Integration
Author(s) -
Gao Pingqi,
Zhang Qing,
Li Hong,
ChanPark Mary B.
Publication year - 2011
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201100448
Subject(s) - materials science , microfabrication , electrode , nanotechnology , carbon nanotube , nanometre , optoelectronics , reproducibility , field effect transistor , transistor , fabrication , electrical engineering , voltage , composite material , medicine , chemistry , alternative medicine , statistics , mathematics , engineering , pathology
Abstract A novel approach to creating a gap on the nanometer scale between two adjacent electrodes of the same or different metals is described. The gap size can be well controlled through sidewall coverage in a self‐aligned manner and it can be tuned from 60 nm down to 5 nm with high reproducibility. This technique is fully compatible with traditional microfabrication technology and it is easily implemented to fabricate a nanogap electrode array for integration purposes. An array of short‐channel single‐walled carbon nanotube field‐effect transistors is demonstrated.