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Stretchable Field‐Effect‐Transistor Array of Suspended SnO 2 Nanowires
Author(s) -
Shin Gunchul,
Yoon Chang Hoon,
Bae Min Young,
Kim Yoon Chul,
Hong Sahng Ki,
Rogers John A.,
Ha Jeong Sook
Publication year - 2011
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201100116
Subject(s) - nanowire , transistor , materials science , field effect transistor , nanotechnology , interconnection , field (mathematics) , optoelectronics , float (project management) , computer science , electrical engineering , telecommunications , engineering , voltage , mathematics , marine engineering , pure mathematics
Stretchable device systems with suspended SnO 2 nanowires (NWs) as channel materials: Oxygen plasma is used to remove the underlying polymer to float the NWs. These suspended NW field‐effect transistors exhibit high electrical performance. By adopting a neutral mechanical plane and curved interconnection, electrical performance of the suspended NW field‐effect transistors is maintained under stretching up to approximately 40%.
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