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Flexible electronics: 12‐GHz Thin‐Film Transistors on Transferrable Silicon Nanomembranes for High‐Performance Flexible Electronics (Small 22/2010)
Author(s) -
Sun Lei,
Qin Guoxuan,
Seo JungHun,
Celler George K.,
Zhou Weidong,
Ma Zhenqiang
Publication year - 2010
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201090076
Subject(s) - materials science , electronics , transistor , optoelectronics , silicon , thin film transistor , substrate (aquarium) , flexible electronics , fabrication , lithography , nanotechnology , electrical engineering , engineering , voltage , layer (electronics) , medicine , oceanography , alternative medicine , pathology , geology
Abstract Multigigahertz flexible electronics are attractive and have broad applications. A gate‐after‐source/drain fabrication process using preselectively doped single‐crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this approach has become difficult in lithography alignment. In this full paper, a local alignment scheme in combination with more accurate SiNM transfer measures for minimizing alignment errors is reported. By realizing 1 μm channel alignment for the SiNMs on a soft plastic substrate, thin‐film transistors with a record speed of 12 GHz maximum oscillation frequency are demonstrated. These results indicate the great potential of properly processed SiNMs for high‐performance flexible electronics.