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Ultrahigh External Quantum Efficiency from Thin SnO 2 Nanowire Ultraviolet Photodetectors
Author(s) -
Hu Linfeng,
Yan Jian,
Liao Meiyong,
Wu Limin,
Fang Xiaosheng
Publication year - 2011
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201002379
Subject(s) - photodetector , materials science , nanowire , quantum efficiency , optoelectronics , ultraviolet , thin film , optics , nanotechnology , physics
Thin SnO 2 nanowires with uniform diameter and large surface‐to‐volume ratio are synthesized, and a single wire is used to fabricate a high‐performance UV photodetector. An ultrahigh external quantum efficiency of 1.32 × 10 7 is achieved, which is about four orders of magnitude larger than that of conventional SnO 2 photodetectors.
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