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Ni 3 Se 4 /ZnSe Heterostructured Nanowires Grown by Molecular Beam Epitaxy
Author(s) -
Wang Gan,
Lok Shu Kin,
Wong George K. L.,
Sou Iam Keong
Publication year - 2011
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201002319
Subject(s) - nanowire , materials science , molecular beam epitaxy , catalysis , nanomaterial based catalyst , optoelectronics , nanotechnology , epitaxy , nanoparticle , layer (electronics) , chemistry , biochemistry
Ni 3 Se 4 /ZnSe heterostructured nanowires with a sharp interface are fabricated using nanocatalysts generated on an annealed Au/Ni/ZnSe trilayer. The top Ni 3 Se 4 section acts as an efficient catalyst to assist ultrafast growth of the bottom ZnSe section. A greater understanding of how the effective area and size of the catalyst affect the growth rate and preferred axial orientation of ultrathin nanowires is obtained.
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