Premium
Seeding of Silicon Wire Growth by Out‐Diffused Metal Precipitates
Author(s) -
Ganapati Vidya,
Fenning David P.,
Bertoni Mariana I.,
Kendrick Chito E.,
Fecych Alexandria E.,
Redwing Joan M.,
Buonassisi Tonio
Publication year - 2011
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201002250
Subject(s) - silicon , materials science , seeding , metal , nanotechnology , optoelectronics , chemical engineering , metallurgy , engineering , aerospace engineering
Metals diffused into bulk silicon can be manipulated to out‐diffuse and precipitate in microsized droplets at surfaces, allowing for subsequent silicon wire growth. This technique allows for both high‐throughput and precision in the size and positions of metal droplets on the silicon surface.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom